X-NAND
Future Architecture of 3D NAND
QLC 3D NAND flash has already found many applications due to its higher density and lower price than other NAND types. However, a serious limitation is that QLC has relatively low performance, especially write speed. NEO Semiconductor has developed a new architecture called X-NAND, which can increase QLC NAND's read speed by 4X and write throughput by 8X. That results in QLC NAND with read/write performance comparable to SLC NAND. X-NAND architecture can produce the high-speed, low-cost solution required by such emerging applications as AI/ML, 5G, real-time analysis, VR/AR, and cybersecurity. X-NAND architecture can be applied to SLC to PLC flash. Simulation shows that X-NAND in SLC can increase read speed by 10X and deliver an astonishing read throughput of 85 GB/s. The architecture enables NAND flash to be readily integrated into ultra-high-bandwidth 3D integrated chips.
X-NAND (trademark pending) is the property of NEO Semiconductor, Inc.
Flash Memory Summit 2020
Nov. 10-12, 2020
We are presenting X-NAND architecture in Flash Memory Summit 2020, Keynote 11. Please come and join us !
3D Emerging Memories
Ultra-High-Speed Storage Class Memory
3D emerging memories offer ultra-high speed and high-density non-volatile data storage. One of the biggest challenges of such types of memories is the leakage current between cells that share word lines and bit lines. NEO Semiconductor’s unique cell structure eliminates the leakage current, which results in faster and more reliable operations. By using this unique cell structure, more layers of memory cells can be vertically stacked by using less process steps. This reduces the manufacturing cost and increases the density. NEO Semiconductor’s innovative 3D emerging memory technology is scheduled to be announced in late 2021.
Ultra-Low-Power Embedded OTP for IoT
10X Battery Life, 2X Density
IoT applications are among the fastest growing markets today. One of the technical challenges for IoT devices is the requirement of ultra-low power consumption. Because many IoT devices are powered by batteries, low power consumption is the key to increasing battery life. NEO Semiconductor’s CMOS embedded OTP can achieve the lowest power supply voltage in the industry. By using an unique program condition, the OTP cell can be read by using only 0.75V. Compared with the conventional OTP cell that requires 2.2V to read, NEO Semiconductor's OTP cell can reduce the power consumption to 10% and provide 10 times the battery life. Moreover, NEO semiconductor's OTP cell can store two bits of data in one cell. That reduces the cell cost and the footprint to 50%.