3D X-DRAMTM
World’s First
3D NAND-like DRAM
3D X-DRAM is a game-changing technology for DRAM, leveraging a 3D NAND-like cell structure to achieve remarkable density, power efficiency, and scalability. Three innovative generations of cells leverage a modified 3D NAND flash process, significantly reducing development complexity and costs while boosting DRAM density by 10X.
Also, these designs eliminates the need for TSV (through-silicon vias) and enable the use of hybrid bonding technology, which can scale bandwidth by up to 16X while significantly reducing power consumption and heat generation—making it a transformative innovation for AI applications.
The original 3D X-DRAM.1T0C is built on Floating Body Cell (FBC) technology. In 2025, 3D X-DRAM evolved into a broader family, incorporating 1T1C and 3T0C to enhance compatibility with existing DRAM processes and meet market demands. Together, these three cell structures provide exceptional capacity and bandwidth for modern and emerging applications.
1T0C: one transistor, zero capacitor 
1T1C: one transistor, one capacitor 3T0C: three transistors, zero capacitor.
3D X-DRAM Family
1T0C
Based on Floating Body Cell (FBC) technology. (1T0C: one transistor, zero capacitor)
1T1C (New)
Based on traditional DRAM technology using IGZO. (1T1C: one transistor, one capacitor)
3T0C (New)
Based on traditional 2T0C gain cell design using IGZO. (3T0C: three transistors, zero capacitor)
3D X-DRAM.1T1C (New)
The new 1T1C cell integrates one capacitor and one transistor. It adopts a 3D NAND-like structure to reduce manufacturing costs while utilizing an IGZO (Indium Gallium Zinc Oxide) channel to enhance data retention.
3D X-DRAM.3T0C (New)
The 3T0C cell integrates three transistors with IGZO channels: a write transistor, a read transistor, and a storage transistor.
The storage transistor retains data by holding electrons in its gate, enabling current sensing.
Ideal not only for DRAM applications but also for emerging in-memory computing and AI applications.
3D X-DRAM.1T1C
TCAD Simulation
Write Data
TCAD (Technology Computer-Aided Design) simulations have verified the operation of the 1T1C cell, demonstrating its ability to achieve fast read and write operations at 10 nanoseconds.
Store Data
3D X-DRAM
Array Structure
3D NAND-like
Array and Process
3D X-DRAM is a game-changing technology based on the innovative, capacitorless Floating Body Cell. It leverages existing NAND processes to make 3D NAND-like array, thus it can scale easily and cost-effectively when compared with other 3D DRAM solutions in development.
3D X-DRAM.1T0C Cell Structure
Based on Floating Body Cell Technology
3D X-DRAM.1T0C
2D Floating Body Cell
3D X-DRAM.1T0C uses a unique dual-gate structure to solve problems traditional Floating Body Cells faced from using a single-gate structure, including Gate-Pumping, GIDL leakage, smaller sensing window, and short retention time.
The Future of
DRAM Technology
The top curve shows the estimated density of 3D X-DRAM based on the roadmap of the existing 3D NAND technology. Since 3D X-DRAM manufacturing process is similar to 3D NAND, 3D X-DRAM density will increase along with the increase of layers in 3D NAND. The actual density of 3D X-DRAM is dependent on the advancement of 3D NAND process.
3D X-DRAM can provide 8 times more capacity for High Bandwidth Memory (HBM), so a typical HBM capacity for AI chips can be increased from 192 GB to 1.5 TB, resulting in a boosted performance for AI applications, such as ’Generative AI (GenAI)’ – ChatGPT, Copilot, Gemini, Claude, Jasper, etc.
AI Revolution
Data 1 (High current)
Data 0 (Low current)
TCAD Simulations
Technology Computer-Aided Design (TCAD) is utilized in optimization of 3D X-DRAM.1T0C cell structure and operations. The cell is written with data 1 using impact ionization and data 0 using forward bias condition.