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X-NAND Gen2 that enables 3D NAND flash memory with 20X faster write performance received top honors at Flash Memory Summit 2022 – After officially announcing its groundbreaking technology, X-NAND Gen2, NEO Semiconductor captured the top prize at Flash Memory Summit 2022, winning the “Best of Show” award for the Most Innovative Memory Technology. This category addresses innovations that will change the way flash memory is used in products and raise the bar to new levels of performance, availability, endurance, scalability, and energy efficiencies.
SANTA CLARA, CA – November 11, 2020 – NEO Semiconductor was honored with a Flash Memory Summit 2020 Best of Show Award for Hardware Architecture at today’s Flash Memory Summit 2020 Best of Show Awards ceremony.
The Flash Memory Summit, the world’s largest and most prestigious storage industry conference, and exposition, recognizes NEO Semiconductor’s X-NAND product solution.
“5G, robotics, virtual reality and AI applications demand the highest level of performance in order to meet the service level objectives of business-critical data center workloads,” said Jay Kramer