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NEO’s IGZO-based 3D X-DRAM delivers up to 512Gb density and 450-second retention with ultra-low power consumption — built on 3D NAND-compatible processes and optimized for AI, in-memory computing, and next-gen DRAM and HBM applications; proof-of-concept test chips expected in 2026
READ MORESan Jose, California, August 6, 2024 – NEO Semiconductor, a leading developer of innovative
READ MOREThe new 3D X-AI Chip accelerates AI performance by 100X and reduces power consumption by 99%
READ MORECEO Andy Hsu will introduce NEO Semiconductor’s 3D X-AI™, a game-changing 3D memory with AI
READ MOREInnovative mechanism aims to increase data retention by 40,000X and sensing window by 20X
READ MOREInnovative 3D floating body cell with a unique dual-gate structure delivers high sensing margins, retention times, and endurance cycles.
READ MORE3D X-DRAM™, the world’s first 3D NAND-like DRAM cell array, targeted to solve DRAM’s capacity bottleneck and replace the entire 2D DRAM market received top honors at Flash Memory Summit 2023
READ MORECEO Andy Hsu will introduce new applications and variations for 3D NAND flash and 3D DRAM
READ MOREThe world’s first 3D NAND-like DRAM is targeted to solve DRAM’s capacity bottleneck and replace the entire 2D DRAM market
READ MOREX-NAND Gen2 that enables 3D NAND flash memory with 20X faster write performance received top honors at Flash Memory Summit 2022
READ MOREFirst-of-its-kind architecture lowers refresh power by 85% and activation latency by 50%; demonstrates NEO’s commitment to sustainability
READ MOREX-NAND Gen2 enables 3D NAND flash memory with 20X faster write performance
READ MORECEO Andy Hsu will introduce new ways to overcome 3D NAND flash and DRAM limitations
READ MOREX-NAND architecture enables NAND flash memory with lower cost and higher performance
READ MOREDiscover what’s driving the next wave of business-critical applications, from 5G to IoT and AI solutions.
READ MOREX-NAND’s Scalability and Cost Effectiveness Decisive Factor
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