Resources

Chairman of the Awards Program and President of Network Storage Advisors Inc. “We are proud to recognize NEO Semiconductor X-NAND product solution for providing an excellent high-performance solution that can uniquely lower the cost across all tiers of SSD technologies.”

“We are delighted to receive this award at the world-famous Flash Memory Summit. It is a fantastic honor and achievement for the debut of X-NAND,” said Andy Hsu, Founder and CEO, NEO Semiconductor. “X-NAND architecture is a monumental breakthrough in NAND flash memory design. From SLC to QLC, each generation’s NAND flash capacity has grown larger, and costs have become cheaper, but its speed has also become significantly slower. This bottleneck with QLC NAND prevents its use in applications that require high speed performance. Our X-NAND architecture solves this bottleneck by increasing the planes of the array using the existing page buffer size, which increases the parallelism for read and write operations. As a result, X-NAND can achieve QLC density with SLC speed.” 

According to show organizers, a record number of award submissions were received this year making the judging challenging and also made each of the categories extremely competitive. Details of the award-winning companies, innovative products and solutions can be found at: https://www.flashmemorysummit.com/English/News_Info/Best_of_Show/BOS_Winners_2020.html

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About Flash Memory Summit

Flash Memory Summit showcases the mainstream applications, key technologies, leading vendors, and innovative startups driving the multi-billion-dollar non-volatile memory and SSD markets. FMS is now the world’s largest event featuring the trends, innovations, and influencers leading the adoption of flash memory in demanding enterprise storage, high-performance computing, and cloud systems.

About NEO Semiconductor

NEO Semiconductor is a startup company focused on 3D NAND and 3D emerging memories. The company was founded in 2012 by Andy Hsu and a team in San Jose, California. The company currently owns 20 U.S. patents in design architectures and cell structures. In 2018, the company made a breakthrough in 3D NAND architecture named X-NAND. X-NAND can achieve SLC’s speed with TLC and QLC NAND. This provides a high-speed, low-cost solution for 5G, AI and many applications.

Andy Hsu (right) and Ray Tsay (left) receive the Flash Memory Summit Best of Show Award from Jay Kramer, FMS Chair of the Awards Program