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The world’s first 3D NAND-like DRAM is targeted to solve DRAM’s capacity bottleneck and replace the entire 2D DRAM market
READ MOREX-NAND Gen2 that enables 3D NAND flash memory with 20X faster write performance received top honors at Flash Memory Summit 2022
READ MOREFirst-of-its-kind architecture lowers refresh power by 85% and activation latency by 50%; demonstrates NEO’s commitment to sustainability
READ MOREX-NAND Gen2 enables 3D NAND flash memory with 20X faster write performance
READ MORECEO Andy Hsu will introduce new ways to overcome 3D NAND flash and DRAM limitations
READ MOREX-NAND architecture enables NAND flash memory with lower cost and higher performance
READ MOREDiscover what’s driving the next wave of business-critical applications, from 5G to IoT and AI solutions.
READ MOREX-NAND’s Scalability and Cost Effectiveness Decisive Factor
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X-NAND Gen2 that enables 3D NAND flash memory with 20X faster write performance received top honors at Flash Memory Summit 2022 – After officially announcing its groundbreaking technology, X-NAND Gen2, NEO Semiconductor captured the top prize at Flash Memory Summit 2022, winning the “Best of Show” award for the Most Innovative Memory Technology. This category addresses innovations that will change the way flash memory is used in products and raise the bar to new levels of performance, availability, endurance, scalability, and energy efficiencies.
SANTA CLARA, CA – November 11, 2020 – NEO Semiconductor was honored with a Flash Memory Summit 2020 Best of Show Award for Hardware Architecture at today’s Flash Memory Summit 2020 Best of Show Awards ceremony.
The Flash Memory Summit, the world’s largest and most prestigious storage industry conference, and exposition, recognizes NEO Semiconductor’s X-NAND product solution.
“5G, robotics, virtual reality and AI applications demand the highest level of performance in order to meet the service level objectives of business-critical data center workloads,” said Jay Kramer
