NEO Semiconductor is a high-tech company focused on 3D NAND flash memory technology and other memory technologies. The company was founded in 2012 by Andy Hsu and a team in San Jose, California. The company currently owns more than 20 U.S. patents in memory design architectures and cell structures. In 2018, the company made a breakthrough in 3D NAND architecture named X-NAND that can achieve SLC speed with TLC and QLC densities. This provides a high-speed, low-cost solution for 5G, AI, and many applications. The company presented X-NAND architecture during the Flash Memory Summit 2020 conference and won the Best of Show Award for ‘Most Innovative Flash Memory Startup’.
Andy Hsu | Founder/CEO
Andy is the Founder & CEO of NEO Semiconductor. He has 25 years of experience in the semiconductor industry. Before founding the company, he led the R&D and Engineering teams of a startup company for 16 years and developed more than 60 products in NOR flash, EEPROM, and NVSRAM. He is an inventor of 100+ granted US patents in non-volatile memory. He wrote a thesis about Artificial Neural Networks in graduate school. He earned an MS in Electrical, Computer, and System Engineering (ECSE) from Rensselaer Polytechnic Institute (RPI) and a BS from the National Cheng-Kung University in Taiwan.
Ray Tsay | Co-Founder/VP of Engineering
Ray has over 30 years of experience in the semiconductor industry. Prior to NEO, he worked at many companies including Integrated Silicon Solution (ISSI), ICT, and EG&G Reticon. He led engineering teams for testing, product, and manufacturing. He has broad experience in various products such as CCD, CPLD, SRAM, EEPROM, EPROM, and flash memory. He holds a MS degree in Electrical and Computer Engineering from Arizona State University, a MS in Chemical and Material Engineering from the University of Iowa, and a BS in Chemical Engineering from National Central University in Taiwan.