NEO Semiconductor is a high-tech company focused on 3D NAND flash memory technology and other memory technologies. The company was founded in 2012 by Andy Hsu and a team in San Jose, California. The company currently owns more than 20 U.S. patents in memory design architectures and cell structures. In 2018, the company made a breakthrough in 3D NAND architecture named X-NAND that can achieve SLC speed with TLC and QLC densities. This provides a high-speed, low-cost solution for 5G, AI, and many applications. The company presented X-NAND architecture during the Flash Memory Summit 2020 conference and won the Best of Show Award for ‘Most Innovative Flash Memory Startup’.
Andy Hsu | Founder & CEO
Andy Hsu is the Founder and CEO of NEO Semiconductor. He has more than 25 years of experience in the semiconductor industry including positions as VP of Engineering and leader of R&D and Engineering Teams. This resulted in the development of more than 60 products in various non-volatile memories. Andy is an accomplished technology visionary and inventor of more than 120 granted U.S. patents. He performed research in the fields of Neural Networks and Artificial Intelligence (AI) while earning a master’s degree in Electrical, Computer, and System Engineering (ECSE) from Rensselaer Polytechnic Institute (RPI) in New York. He earned a bachelor’s degree from the National Cheng-Kung University in Taiwan.
Ray Tsay | Co-Founder & VP of Engineering
Ray has over 30 years of experience in the semiconductor industry. Prior to NEO, he worked at many companies including Integrated Silicon Solution (ISSI), ICT, and EG&G Reticon. He led engineering teams for testing, product, and manufacturing. He has broad experience in various products such as CCD, CPLD, SRAM, EEPROM, EPROM, and flash memory. He holds a MS degree in Electrical and Computer Engineering from Arizona State University, a MS in Chemical and Material Engineering from the University of Iowa, and a BS in Chemical Engineering from National Central University in Taiwan.