X-NAND architecture combines QLC density and SLC speed in 3D NAND flash memory. It can achieve 3X random read/write speed and 15-30X sequential read/write speed of conventional QLC NAND. This provides high-speed, high-density, and low-cost data storage. X-NAND is a key technology for 5G and AI applications.
NEO Semiconductor's unique 3D cell structure for emerging memories can achieve higher memory capacity and reduce manufacturing cost. It provides a great solution for Storage Class Memory. The technology is scheduled to be announced in late 2021.
NEO Semiconductor’s CMOS embedded OTP technology can achieve the lowest power supply voltage in the industry. With read voltage only 0.7V, it can reduce the power consumption to 10% and prolong battery life by 10 times. It is the best choice for IoT applications
- NEO Semiconductor. San Jose, CA, USA
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NEO Semiconductor. San Jose, CA. USA