Technology Breakthrough for 5G, AI, IoT Era

X-NAND architecture is a big breakthrough of 3D NAND flash memory technology. It can achieve more than 10 times speed of the conventional products with the same or reduced cost. X-NAND provides an excellent high-performance and low-cost solution to fulfill the high-speed requirements for 5G, AI, and IoT era.

Most Innovative Flash Memory Startup Award Winner - FMS 2020

NEO Semiconductor won the 'Best of Show Award - Most Innovative Flash Memory Startup' in Flash Memory Summit, November 2020

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Award - winning X-NAND Architecture

X-NAND

Conventional NAND

X-NAND architecture divides the array into 16-64 planes (Y-direction) with the same or less page buffers than the conventional, This provides ultra-high speed without increasing the die size.

Conventional NAND

Conventiona 3D NAND flash memory only has 2-4 planes (Y-direction) due to the die size can only fit 32-64KB of page buffers. The huge capacitnace of the long bit lines causes very slow speed.

SLC Speed + QLC Cost

X-NAND achieves 3X random read & write speed, 27X sequential read speed, and 15X random write speed of the conventional NAND flash memory, while it does not increase andy chip size or manyfacturing cost.

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