World’s First 3D
NAND-like DRAM
Next Gen Memory Technologies
NEO Semiconductor focuses on developing advanced technologies and architectures for semiconductors, like memory, and our innovations help manufacturers leverage fabrication plants to accelerate road maps. This leads to businesses and consumers experiencing better performance, capacity, cost, and power consumption from services and products that use 3D X-DRAM, X-DRAM, and X-NAND.
3D X-DRAMTM
World’s First 3D NAND-Like DRAM
3D X-DRAM is a game-changing technology. It uses innovative Floating Body Cell (FBC) technology, storing data as electric charges using one transistor and zero capacitors. 3D X-DRAM has a simple structure and small cell size, like 3D NAND flash memory, making manufacturing and scaling easier and less expensive than other 3D DRAM solutions. The estimated capacity of 3D X-DRAM when using 230 layers is 128 Gb, or eight times higher than ordinary DRAM.
3D X-DRAMTM Cell Structure
Based on Floating Body Cell Technology
3D X-DRAMTM
2D Floating Body Cell
3D X-DRAMTM
Array Structure
3D NAND-like
Array and Process
The Future of
DRAM Technology
The top curve shows the estimated density of 3D X-DRAM based on the roadmap of the existing 3D NAND technology. Because 3D X-DRAM manufacturing process is extremely similar with 3D NAND, the 3D X-DRAM density will increase as the number of 3D NAND layers continues to increase over time. The actual density of 3D X-DRAM is dependent on the advancement of 3D NAND process at that time.
Flash Memory Summit 2023
August 8-10, 2023 - Santa Clara Convention Center, CA
NEO Semiconductor Founder & CEO, Andy Hsu, will deliver a keynote presentation on 3D X-DRAMTM technology
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Check out 3D X-DRAMTM whitepaper
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Most Innovative Memory Technology Award Winner - FMS 2023
Most Innovative Memory Technology Award
Winner -
FMS 2023
3D X-DRAMTM is the world’s first 3D NAND-like DRAM cell array that is targeted to solve DRAM’s capacity bottleneck and replace the entire 2D DRAM market. 3D X-DRAM™ structure that is based on capacitor-less floating body cell technology, can be manufactured using today’s 3D NAND-like process and only needs one mask to define the bit line holes and form the cell structure inside the holes. This cell structure simplifies the process steps and provides a high-speed, high-density, low-cost, and high-yield solution. Neo Semiconductor captured the top prize at Flash Memory Summit 2023, winning the “Best of Show” award for the Most Innovative Memory Technology. This category addresses innovations that will change the way high-performance memory is used in products and raise the bar to new levels of performance, availability, endurance and scalability.
Most Innovative Memory Technology Award Winner - FMS 2022
Most Innovative Memory Technology Award
Winner -
FMS 2022
X-NAND Gen2 that enables 3D NAND flash memory with 20X faster write performance received top honors at Flash Memory Summit 2022 – After officially announcing its groundbreaking technology, X-NAND Gen2, NEO Semiconductor captured the top prize at Flash Memory Summit 2022, winning the “Best of Show” award for the Most Innovative Memory Technology. This category addresses innovations that will change the way flash memory is used in products and raise the bar to new levels of performance, availability, endurance, scalability, and energy efficiencies.
Most Innovative Flash Memory Startup Award Winner - FMS 2020
NEO Semiconductor and X-NAND were recognized at the Flash Memory Summit 2020 conference with a Best of Show Award for “Most Innovative Flash Memory startup” for a high-performance solution that can uniquely lower cost across all tiers of SSD technologies.