QLC Density + SLC Speed

World's Fastest 3D NAND Architecture

X-NAND architecture combines QLC density and SLC speed in 3D NAND flash memory. It can achieve 3X random read/write speed and 15-30X sequential read/write speed of conventional QLC NAND. This provides high-speed, high-density, and low-cost data storage. X-NAND is a key technology for 5G and AI applications.

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NEO Semiconductor honored with Best of Show Award - Most Innovative Flash Memory Startup - in Flash

Most Innovative Flash Memory Startup - FMS 2020

NEO Semiconductor Honored with Best of Show Award in Flash Memory Summit 2020.

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NEO Semiconductor, X-NAND, IoT memory, 3D NAND flash memory

Coming Soon in 2021

NEO Semiconductor's unique 3D cell structure for emerging memories can achieve higher memory capacity and reduce manufacturing cost. It provides a great solution for Storage Class Memory. The technology is scheduled to be announced in late 2021.

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10X Power Saving, 2X Density

NEO Semiconductor’s CMOS embedded OTP technology can achieve the lowest power supply voltage in the industry. With read voltage only 0.7V, it can reduce the power consumption to 10% and prolong battery life by 10 times. It is the best choice for IoT applications

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