NEO Semiconductor won the 'Best of Show Award - Most Innovative Flash Memory Startup' in Flash Memory Summit Conference in November 2020.
X-NAND is a revolutionary 3D NAND flash memory architecture. The traditional 3D NAND flash memory has only 2 - 4 planes in Y-direction. X-NAND architecture can increase the number of planes to 16 - 64 without increasing chip size. This reduces the bit line delay to only 1/4 - 1/32. It also allows 4 - 32 times of more data to be transferred in parallel. This drastically increases the speed performance of 3D NAND flash memory.
3D NAND flash memory is the main data storage device used in smartphones, solid state drives, data centers, cloud, USB drives, memory cards, IoT devices, drones, and robots. X-NAND can achieve higher speed and performance without increasing cost or footprint. It provides the key solution for 5G and AI applications.
X-NAND architecture divides the array into 16-64 planes. This reduces the bit line length and capacitance to only 1/16-64, and increases the random read and write speed by 3-12 times.
The conventional 3D NAND flash memory has only 2-4 planes due to the layout size of page buffers. The large bit line capacitance causes very slow speed for read and program-verify operations.
X-NAND achieves 3X random read & write speed, 27X sequential read speed, and 15X sequential write speed of the conventional NAND flash memory, while it does not increase any chip size or manufacturing cost.
NEO Semiconductor has been honored by CIO Review magazine as one of “10 Most Promising Semiconductor Technology Solution Providers - 2021" and featured as the cover story of the annual Semiconductor Technology edition.
Watch CNBC Advancement TV Series program to discover how X-NAND technology can provide ultra-high speed and low cost solution to revolutionize the data storage and communication industry in the current AI & 5G era.
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