NEO Semiconductor is a leading company creating innovative 3D NAND flash, 3D DRAM, and 3D AI Chip technologies.
3D X-DRAM.1T1C and .3T0C
New IGZO-based Cell
Added to 3D X-DRAM Family
The new 1T1C cell integrates one capacitor and one transistor. It adopts a 3D NAND-like structure to reduce manufacturing costs while utilizing an IGZO (Indium Gallium Zinc Oxide) channel to enhance data retention.
3D X-AITM
AI Processing in 3D Memory
This innovative 3D memory can accelerate AI Chip performance by 100X and reduce power consumption by 99%. This technology is set to revolutionize the performance, power consumption, and memory density for AI applications like generative AI.
3D X-DRAMTM
World’s first 3D NAND-like DRAM
3D D-DRAM is a game-changing technology. It uses an innovative simple structure like 3D NAND flash memory, making manufacturing and scaling easy and less expensive than other 3D DRAM solutions. Its estimated density is eight times higher than ordinary DRAM.
X-NANDTM
World’s Fastest NAND Architecture
X-NAND can increase NAND flash memory’s random read/write speed by 3X and sequential read/write throughput by 20X to enhance today’s AI applications.
X-DRAMTM
World’s Lowest Power Consumption DRAM
X-DRAM architecture reduces power consumption, lower latency, and increases throughout to overcome the challenges of conventional DRAM.
Flash Memory Summit 2023
August 8-10, 2023 - Santa Clara Convention Center, CA
NEO Semiconductor Founder & CEO, Andy Hsu, will deliver a keynote presentation on 3D X-DRAMTM technology
Looking for more information?
Check out 3D X-DRAMTM whitepaper
Most Innovative Memory Technology Award
Winner -
FMS 2023
Most Innovative Artificial Intelligence (AI) Application
FMS 2024
August 06, 2024
NEO’s 3D X‑AI™ Awarded “Best of Show” for “Most Innovative Artificial Intelligence (AI) Application”. 3D X‑AI chip is targeted to replace current DRAM chips inside high bandwidth memory (HBM) by reducing data bus bottlenecks from huge data transfer between HBM and GPUs during AI workloads. This innovation is the world’s first true 3D memory with AI processing, which accelerates AI Chip performance by 100X and reduces power consumption by 99%. It has 8X Memory Density to enable HBM to store large AI models. This category recognizes how a product or service that includes all forms of high-performance memory or storage is being used to solve a specific AI problem and includes the use of AI in storage and memory products, or potentially in a product that accelerates AI tasks.
Most Innovative Memory Technology
FMS 2023
Most Innovative Memory Technology
FMS 2023
August 10, 2023
NEO’s 3D X‑DRAM™ captured the top prize at Flash Memory Summit 2023, new the “Best of Show” award for the “Most Innovative Memory Technology”. 3D X‑DRAM is the world’s first 3D NAND-like DRAM cell array that is targeted to solve DRAM’s capacity bottleneck and replace the entire 2D DRAM market. 3D X‑DRAM structure is based on capacitor-less floating body cell technology. It can be manufactured using today’s 3D NAND-like process and needs only one mask to define bit line holes for forming the cell structure inside the holes. This cell structure simplifies the process steps while providing a high-speed, high-density, low-cost, and high-yield solution. This category addresses innovations that will change the way high-performance memory is used in products and raise the bar to new levels of performance, availability, endurance, and scalability.
Most Innovative Memory Technology
FMS 2022
Most Innovative Memory Technology
FMS 2022
August 04, 2022
NEO’s X‑NAND™ Gen2 was honored with a Flash Memory Summit 2022 “Best of Show Award” for “Most Innovative Memory Technology”. X‑NAND Gen2 enables 3D NAND flash memory with 3X random read/write speed and 20X sequential read/write speed than conventional NAND flash memory with no die size increase. This category addresses innovations that will change the way flash memory is used in products and raise the bar to new levels of performance, availability, endurance, scalability, and energy efficiencies.
Most Innovative Flash
Memory Startup
FMS 2020
Most Innovative Memory Technology
FMS 2022
November 11, 2020
NEO’s X‑NAND™ was honored with a Flash Memory Summit 2020 “Best of Show” Award for “Most Innovative Startup Company” in the category of Hardware Architecture. X‑NAND architecture provides an excellent high-performance solution to lower the cost across all tiers of SSD technologies by increasing the planes of the array without increasing the die size. X‑NAND can achieve QLC density with SLC speed.
Most Innovative Flash
Memory Startup
FMS 2020
SANTA CLARA, CA – November 11, 2020 – NEO Semiconductor X-NAND™ was honored with a Flash Memory Summit 2020 “Best of Show” Award for “Most Innovative Startup Company” in the category of Hardware Architecture. X-NAND architecture provides an excellent high-performance solution to lower the cost across all tiers of SSD technologies by increasing the planes of the array without increasing the die size. X-NAND can achieve QLC density with SLC speed.