X-NAND architecture combines QLC density and SLC speed in 3D NAND flash memory. It can achieve 3X random read/write speed and 15-30X sequential read/write speed of conventional QLC NAND. This provides high-speed, high-density, and low-cost data storage. X-NAND is a key technology for 5G and AI applications.
NEO Semiconductor's X-NAND architecture is a big breakthrough in 3D NAND flash memory. It allows the array to be divided into 16-64 planes rather than the conventional 4 planes. This provides ultra-high speed performance for 5G and AI applications with zero manufacturing cost increase.
- NEO Semiconductor. San Jose, CA, USA
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NEO Semiconductor. San Jose, CA. USA