CEO Andy Hsu will introduce new ways to overcome 3D NAND flash and DRAM limitations
NEO Semiconductor, a leading developer of innovative architectures for 3D NAND flash and DRAM memory,
today announced its participation at Flash Memory Summit 2022, taking place in person in Santa Clara, California, on August 2-4. The company CEO, Andy Hsu, will deliver a keynote address titled New Memory and Storage Architectures for Enterprise and Consumer Products on August 3 at 11:40 a.m. Pacific Time.
Flash Memory Summit is the world’s largest storage industry show and draws record attendance,
including global enterprises seeking new and powerful solutions. As digital transformation accelerates in
all industries and sectors, enterprise and consumer workloads increasingly demand higher-performance
memory and storage. Yet, conventional DRAM and 3D NAND flash pose limitations.
In his keynote, Mr. Hsu will address these challenges and how rethinking memory and storage
architectures can significantly reduce data latency, lower power, and improve throughput. He will share
innovative ways to design sustainable memory architectures that accelerate cloud and enterprise data
center performance along with enabling cost-efficient consumer and mobile devices.
“We are a small startup with big ambitions to radically disrupt the industry,” says Andy Hsu, Founder
and CEO of NEO Semiconductor and an accomplished technology inventor with more than 120 granted
U.S. patents. “I’m truly looking forward to sharing our newest groundbreaking architectures at Flash
Memory Summit 2022 that create unprecedented value for semiconductor companies manufacturing
memory products, and cloud providers and enterprise companies implementing storage solutions.”
NEO is the company behind the world’s fastest 3D NAND flash and lowest power DRAM memory
architectures. In 2020, Flash Memory Summit presented the company with the Most Innovative Flash
Memory Startup award for its groundbreaking 3D NAND architecture, X-NAND.
About NEO Semiconductor
NEO Semiconductor is a high-tech company focused on advancing 3D NAND flash and DRAM memory
technologies. The company was founded in 2012 by Andy Hsu and a team in San Jose, California, and
owns more than 20 U.S. patents. In 2020, the company made a breakthrough in 3D NAND architecture
named X-NAND that can achieve SLC performance at TLC and QLC densities to provide high-speed, lowcost solutions for many applications, including 5G and AI. The company presented the X-NAND
architecture at Flash Memory Summit 2020 conference and won the Best of Show Award for the Most
Innovative Flash Memory Startup.
New Memory and Storage Architectures for Enterprise and Consumer Products:
Watch Neo’s Keynote Presentation
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