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NEO Semiconductor honored Best of Sow Award - Most Innovative Flash Memory Startup - in Flash Memory

Best of Show Award - Flash Memory Summit 2020

Most Innovative Flash Memory Startup

 
NEO Semiconductor Honored with Hardware Architecture for Best of Show Award at Flash Memory Summit 2020 


X-NAND’s Scalability and Cost Effectiveness Decisive Factor


SANTA CLARA, CA – November 11, 2020 – NEO Semiconductor was honored with a Flash Memory Summit 2020 Best of Show Award for Hardware Architecture at today’s Flash Memory Summit 2020 Best of Show Awards ceremony.


The Flash Memory Summit, the World’s largest and most prestigious storage industry conference and exposition, recognizes NEO Semiconductor’s X-NAND product solution. 


“5G, robotics, virtual reality and AI applications demand the highest level of performance in order to meet the service level objectives of business-critical data center workloads,” said Jay Kramer, Chairman of the Awards Program and President of Network Storage Advisors Inc. “We are proud to recognize NEO Semiconductor X-NAND product solution for providing an excellent high-performance solution that can uniquely lower the cost across all tiers of SSD technologies.” 


“We are delighted to receive this award in the world-famous Flash Memory Summit. It is a fantastic honor and achievement for the debut of X-NAND,” said Andy Hsu, founder and CEO, NEO Semiconductor. “X-NAND architecture is a monumental breakthrough in NAND flash memory design. From SLC to QLC, each generation’s NAND flash capacity has grown larger and costs have become cheaper, but its speed has also become significantly slower. This bottleneck for QLC NAND prevents its use in applications that require high speed performance. Our X-NAND architecture solves this bottleneck by increasing the planes of the array using the existing page buffer size, which increases the parallelism for read and write operations. As a result, X-NAND can achieve QLC density with SLC speed.” 


According to show organizers, a record number of award submissions were received this year making the judging challenging and each of the categories extremely competitive.


Details of the award-winning companies, innovative products and solutions can be found at: https://flashmemorysummit.com/English/News_Info/Best_of_Show/BOS_Winners.html


Supporting Resources

● Visit FMS: www.FlashMemorySummit.com  

● Follow FMS on https://www.linkedin.com/company/flash-memory-summit/ 

● Follow FMS on Twitter @Flashmem  

● Follow FMS on Facebook at https://www.facebook.com/FlashMemorySummit 


About Flash Memory Summit 

Flash Memory Summit showcases the mainstream applications, key technologies, leading vendors, and innovative startups driving the multi-billion-dollar non-volatile memory and SSD markets. FMS is now the world’s largest event featuring the trends, innovations, and influencers leading the adoption of flash memory in demanding enterprise storage, high-performance computing, and cloud systems. 


About NEO Semiconductor

NEO Semiconductor is a startup company focused on 3D NAND and 3D emerging memories. The company was founded in 2012 by Andy Hsu and a team in San Jose, California. The company currently owns 20 U.S. patents in design architectures and cell structures. In 2018, the company made a breakthrough in 3D NAND architecture named X-NAND. X-NAND can achieve SLC’s speed with TLC and QLC NAND. This provides a high-speed, low-cost solution for 5G, AI and many applications. 


Media Contacts 

● Ray Tsay raytsay@neosemic.com (510) 896-5912.

● Dan Chmielewski +1.949.231.2965 

● Suzanne Tuchler +1.408.307.6900 

● Press@FlashMemorySummit.com 

# # #

Press Release

2020 Best of Show Award Winners PR (pdf)

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NEO Semiconductor BEST OF SHOW Award Winner PR (pdf)

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Flash Memory Summit 2020

Nov. 10-12, 2020


We are presenting X-NAND architecture in Flash Memory Summit 2020 virtual conference, Keynote 11.  Please come and join us! 

Find out more

News

Nov 2020           

NEO honored with Best of Show Award - Most Innovative Flash Memory Startup - in Flash Memory Summit 2020.


Nov 2020           

NEO presents X-NAND in Flash Memory Summit 2020.  


Feb 2020            

NEO is granted with U.S. patent for 3D NAND Programming.


Nov 2019           

NEO is granted with U.S. patent for V-RRAM ™ technology.


Mar 2019           

NEO is granted with U.S. patent for Multi-Page Programming.


Mar 2018           

NEO is granted with U.S. patent for S-NVM ™ technology.


Jun 2018           

NEO is granted with U.S. patent for 3D D-NAND ™ technology. 


Apr 2018            

NEO is granted with Taiwan patent for D-NAND ™ technology. 


Oct 2017           

NEO is granted with U.S. patent for IoT memory technology. 


Sep 2017          

NEO is granted with U.S. patent for D-NAND ™ technology.  


Jul 2017            

NEO is granted with U.S. patent for SONONS technology. 


Nov 2016          

NEO Semiconductor develops V-RRAM ™ technology.


Jan 2016           

NEO Semiconductor develops 3D NAND Program technology.


Sep 2015          

NEO Semiconductor develops SONONS technology.


Jun 2015          

NEO Semiconductor develops embedded IoT NVM technology.


Apr 2015           

NEO Semiconductor develops SONOS flash technology.


Sep 2014          

NEO Semiconductor develops D-NAND technology.


Apr 2014           

NEO develops NAND Multi-Page Program technology.


Sep 2013          

NEO Semiconductor develops S-NVM ™ technology. 


Feb 2013          

NEO Semiconductor develops 3D NAND cell technology. 


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