NEO Semiconductor Honored with Hardware Architecture for Best of Show Award at Flash Memory Summit 2020
X-NAND’s Scalability and Cost Effectiveness Decisive Factor
SANTA CLARA, CA – November 11, 2020 – NEO Semiconductor was honored with a Flash Memory Summit 2020 Best of Show Award for Hardware Architecture at today’s Flash Memory Summit 2020 Best of Show Awards ceremony.
The Flash Memory Summit, the World’s largest and most prestigious storage industry conference and exposition, recognizes NEO Semiconductor’s X-NAND product solution.
“5G, robotics, virtual reality and AI applications demand the highest level of performance in order to meet the service level objectives of business-critical data center workloads,” said Jay Kramer, Chairman of the Awards Program and President of Network Storage Advisors Inc. “We are proud to recognize NEO Semiconductor X-NAND product solution for providing an excellent high-performance solution that can uniquely lower the cost across all tiers of SSD technologies.”
“We are delighted to receive this award in the world-famous Flash Memory Summit. It is a fantastic honor and achievement for the debut of X-NAND,” said Andy Hsu, founder and CEO, NEO Semiconductor. “X-NAND architecture is a monumental breakthrough in NAND flash memory design. From SLC to QLC, each generation’s NAND flash capacity has grown larger and costs have become cheaper, but its speed has also become significantly slower. This bottleneck for QLC NAND prevents its use in applications that require high speed performance. Our X-NAND architecture solves this bottleneck by increasing the planes of the array using the existing page buffer size, which increases the parallelism for read and write operations. As a result, X-NAND can achieve QLC density with SLC speed.”
According to show organizers, a record number of award submissions were received this year making the judging challenging and each of the categories extremely competitive.
Details of the award-winning companies, innovative products and solutions can be found at: https://flashmemorysummit.com/English/News_Info/Best_of_Show/BOS_Winners.html
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About Flash Memory Summit
Flash Memory Summit showcases the mainstream applications, key technologies, leading vendors, and innovative startups driving the multi-billion-dollar non-volatile memory and SSD markets. FMS is now the world’s largest event featuring the trends, innovations, and influencers leading the adoption of flash memory in demanding enterprise storage, high-performance computing, and cloud systems.
About NEO Semiconductor
NEO Semiconductor is a startup company focused on 3D NAND and 3D emerging memories. The company was founded in 2012 by Andy Hsu and a team in San Jose, California. The company currently owns 20 U.S. patents in design architectures and cell structures. In 2018, the company made a breakthrough in 3D NAND architecture named X-NAND. X-NAND can achieve SLC’s speed with TLC and QLC NAND. This provides a high-speed, low-cost solution for 5G, AI and many applications.
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NEO honored with Best of Show Award - Most Innovative Flash Memory Startup - in Flash Memory Summit 2020.
NEO presents X-NAND in Flash Memory Summit 2020.
NEO is granted with U.S. patent for 3D NAND Programming.
NEO is granted with U.S. patent for Multi-Page Programming.
NEO is granted with U.S. patent for S-NVM ™ technology.
NEO is granted with U.S. patent for 3D D-NAND ™ technology.
NEO is granted with Taiwan patent for D-NAND ™ technology.
NEO is granted with U.S. patent for IoT memory technology.
NEO is granted with U.S. patent for D-NAND ™ technology.
NEO is granted with U.S. patent for SONONS technology.
NEO Semiconductor develops 3D NAND Program technology.
NEO Semiconductor develops SONONS technology.
NEO Semiconductor develops embedded IoT NVM technology.
NEO Semiconductor develops SONOS flash technology.
NEO Semiconductor develops D-NAND technology.
NEO develops NAND Multi-Page Program technology.
NEO Semiconductor develops S-NVM ™ technology.
NEO Semiconductor develops 3D NAND cell technology.
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